Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus

ABSTRACT

A solid-state imaging device includes, in a semiconductor substrate, a pixel portion provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain an electric signal and a peripheral circuit portion disposed on the periphery of the pixel portion, wherein a gate insulating film of aMOS transistor in the peripheral circuit portion is composed of a silicon oxynitride film, a gate insulating film of aMOS transistor in the pixel portion is composed of a silicon oxynitride film, and an oxide film is disposed just above the photoelectric conversion portion in the pixel portion.

CROSS REFERENCE TO RELATED APPLICATION

The present application is a continuation of U.S. patent applicationSer. No. 13/926,916, filed Jun. 25, 2013, which is a continuation ofU.S. patent application Ser. No. 12/509,995, filed Jul. 27, 2009, nowU.S. Pat. No. 8,525,909, which claims priority to Japanese PatentApplication Nos. JP 2008-199520 and JP 2009-009523, filed in theJapanese Patent Office on Aug. 1, 2008 and Jan. 20, 2009, respectively,the entire disclosures of which are hereby incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state imaging device, a methodfor manufacturing the solid-state imaging device, and an imagingapparatus.

2. Description of the Related Art

Regarding a solid-state imaging device, e.g., a CMOS sensor, including apixel portion provided with a photoelectric conversion portion, whichphotoelectrically converts incident light to obtain an electric signal,and a peripheral circuit portion disposed on the periphery of the pixelportion, in a semiconductor substrate, a gate insulating film of theperipheral circuit portion (logic element portion) has become thinner asthe element has become finer. Along with that, an increase in tunnelcurrent of the gate insulating film becomes a problem. In the MOStransistor technology, a silicon oxynitride film is used as the gateinsulating film in order to suppress a tunnel current of the gateinsulating film (refer to, for example, Japanese Patent No. 3752241).

In the case where a logic transistor, which includes a siliconoxynitride film serving as a gate insulating film of an element (MOStransistor) disposed in the peripheral circuit portion of the CMOSsensor, is applied, it is desirable that the performance of the CMOSsensor does not deteriorate.

In addition, as shown in FIG. 46, if a gate insulating film 31 composedof a silicon oxynitride film remains on a photoelectric conversionportion (for example, photodiode) 21, there is a problem in thatdeterioration in white defect occurs because of a fixed charge in thegate insulating film 31.

Furthermore, as shown in FIG. 47, regarding an antireflection film justabove a photoelectric conversion portion (for example, photodiode) 21,since a three layer structure (not shown in the drawing) of siliconoxide film/silicon nitride film/silicon oxide film becomes a multiplestructure of silicon oxide (SiO₂) film/silicon nitride (SiN)film/silicon oxide (SiO₂) film/silicon oxynitride film, the lightundergoes multiple reflection and the ripple property in dispersion oflight deteriorates. Moreover, since the ripple property deteriorates, aproblem occurs in that variations in dispersion of light increasebetween chips.

In addition, there is a problem in that optimization becomes complicatedbecause of a multiple structure.

SUMMARY OF THE INVENTION

The present inventors have recognized that in the case where a siliconoxynitride film is applied to a gate insulating film of a MOS transistorin a peripheral circuit portion, the performance of a photoelectricconversion portion (photodiode) of a CMOS sensor deteriorates.

It is desirable to apply a silicon oxynitride film to a gate insulatingfilm of a MOS transistor in a peripheral circuit portion and suppressdeterioration of performance of a photoelectric conversion portion.

A solid-state imaging device according to an embodiment of the presentinvention includes, in a semiconductor substrate, a pixel portionprovided with a photoelectric conversion portion, whichphotoelectrically converts incident light to obtain an electric signaland a peripheral circuit portion disposed on the periphery of theabove-described pixel portion, wherein a gate insulating film of a MOStransistor in the above-described peripheral circuit portion is composedof a silicon oxynitride film, a gate insulating film of a MOS transistorin the above-described pixel portion is composed of a silicon oxynitridefilm, and an oxide film is disposed just above the photoelectricconversion portion in the above-described pixel portion.

In the solid-state imaging device according to an embodiment of thepresent invention, since the gate insulating films in the peripheralcircuit portion and the pixel portion are composed of the siliconoxynitride film, generation of a tunnel current is prevented.Furthermore, since the oxide film instead of the silicon oxynitride filmis disposed just above the photoelectric conversion portion,deterioration in white defect and dark current due to a fixed charge inthe film just above the photoelectric conversion portion can beprevented, whereas this is a problem with respect to the siliconoxynitride film.

A method for manufacturing a solid-state imaging device including apixel portion provided with a photoelectric conversion portion, whichphotoelectrically converts incident light to obtain an electric signal,and a peripheral circuit portion disposed on the periphery of the pixelportion, in a semiconductor substrate, according to an embodiment of thepresent invention, includes the steps of forming a gate insulating filmcomposed of a silicon oxynitride film all over the above-describedsemiconductor substrate, forming gate electrodes of the MOS transistorsdisposed in the above-described pixel portion and the above-describedperipheral circuit portion, on the above-described gate insulating film,and removing the above-described gate insulating film from regions otherthan the regions which are just below the above-described individualgate electrodes and in which the above-described gate insulating filmsare left.

In the method for manufacturing a solid-state imaging device accordingto an embodiment of the present invention, the gate electrodes of theMOS transistors disposed in the peripheral circuit portion and the pixelportion are formed from the silicon oxynitride film. Therefore,generation of a tunnel current is prevented. Furthermore, since thesilicon oxynitride film just above the photoelectric conversion portionis removed, deterioration in white defect and dark current due to afixed charge in the silicon oxynitride film can be prevented.

An imaging apparatus according to an embodiment of the present inventionincludes a light-condensing optical portion to condense incident light,a solid-state imaging device to receive and photoelectrically convertthe light condensed with the above-described light-condensing opticalportion, and a signal processing portion to process the signal subjectedto the photoelectrical conversion, wherein the above-describedsolid-state imaging device includes, in a semiconductor substrate, apixel portion provided with a photoelectric conversion portion, whichphotoelectrically converts incident light to obtain an electric signaland a peripheral circuit portion disposed on the periphery of theabove-described pixel portion, a gate insulating film of a MOStransistor in the above-described peripheral circuit portion is composedof a silicon oxynitride film, a gate insulating film of a MOS transistorin the above-described pixel portion is composed of a silicon oxynitridefilm, and an oxide film is disposed just above the photoelectricconversion portion in the above-described pixel portion.

The imaging device according to an embodiment of the present inventionincludes the solid-state imaging device according to an embodiment ofthe present invention. Therefore, the MOS transistor in the peripheralcircuit portion can be made finer, so that the performance is improved.Moreover, deterioration in white defect and dark current of thephotoelectric conversion portion in each pixel can be prevented.

Regarding the solid-state imaging device according to an embodiment ofthe present invention, generation of a tunnel current is prevented, sothat the transistor characteristics of the peripheral circuit portionand the pixel portion are improved. Furthermore, since deterioration inwhite defect and dark current due to a fixed charge in the photoelectricconversion portion can be prevented, there is an advantage that theimage quality is improved.

Regarding the method for manufacturing a solid-state imaging deviceaccording to an embodiment of the present invention, generation of atunnel current is prevented, so that the transistor characteristics ofthe peripheral circuit portion and the pixel portion are improved.Furthermore, since deterioration in white defect and dark current due toa fixed charge in the photoelectric conversion portion can be prevented,there is an advantage that the image quality is improved.

Regarding the imaging device according to an embodiment of the presentinvention, since the solid-state imaging device according to anembodiment of the present invention is included, the MOS transistor inthe peripheral circuit portion can be made finer, so that theperformance is improved. Moreover, since deterioration in white defectand dark current in the photoelectric conversion portion in each pixelcan be prevented, there is an advantage that the image quality isimproved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic configuration sectional view showing a firstexample of a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 2 is a schematic configuration sectional view showing the firstexample of the solid-state imaging device according to an embodiment ofthe present invention;

FIG. 3 is a schematic configuration sectional view showing a modifiedexample of the first example of the solid-state imaging device accordingto an embodiment of the present invention;

FIG. 4 is a schematic configuration sectional view showing a secondexample of the solid-state imaging device according to an embodiment ofthe present invention;

FIG. 5 is a schematic configuration sectional view showing the secondexample of the solid-state imaging device according to an embodiment ofthe present invention;

FIG. 6 is a schematic configuration sectional view showing a modifiedexample of the second example of the solid-state imaging deviceaccording to an embodiment of the present invention;

FIG. 7 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 8 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 9 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 10 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 11 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 12 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 13 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 14 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 15 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 16 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 17 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 18 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 19 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 20 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 21 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 22 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 23 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 24 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 25 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 26 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 27 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 28 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 29 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 30 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 31 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 32 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 33 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 34 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 35 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 36 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 37 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 38 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 39 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 40 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 41 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 42 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 43 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 44 is a sectional view showing a production step of a method formanufacturing a solid-state imaging device according to an embodiment ofthe present invention;

FIG. 45 is a block diagram showing an imaging apparatus according to anembodiment of the present invention;

FIG. 46 is a schematic configuration sectional view of a CMOS sensor inthe related art; and

FIG. 47 is a schematic configuration sectional view of a CMOS sensor inthe related art.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A first example of a solid-state imaging device according to anembodiment of the present invention will be described with reference toa schematic configuration sectional view of a pixel portion as shown inFIG. 1 and a schematic configuration sectional view of a peripheralcircuit portion as shown in FIG. 2. The pixel portion shown in FIG. 1and the peripheral circuit portion shown in FIG. 2 are disposed in thesame semiconductor substrate.

As shown in FIG. 1 and FIG. 2, a semiconductor substrate 11 includes apixel portion 12 provided with a photoelectric conversion portion 21,which photoelectrically converts incident light to obtain an electricsignal, and a peripheral circuit portion 13 disposed on the periphery ofthe pixel portion 12. The above-described pixel portion 12 and theperipheral circuit portion 13 are isolated by an element isolationregion 14.

In the semiconductor substrate 11 of the above-described pixel portion12, the photoelectric conversion portion 21 is disposed. A transfer gateTRG, a reset transistor RST, an amplifying transistor Amp, and aselection transistor SEL are sequentially disposed in series while beingconnected to the photoelectric conversion portion 21. Theabove-described photoelectric conversion portion 21 is formed from, forexample, a photodiode.

Furthermore, the above-described transfer gate TRG and pixeltransistors, i.e. the reset transistor RST, the amplifying transistorAmp, and the selection transistor SEL, are isolated by an elementisolation region 14.

Therefore, a source-drain region 34 of the above-described amplifyingtransistor Amp is formed as a diffusion layer common to a source-drainregion 35 of the reset transistor RST, and a source-drain region 35 ofthe above-described amplifying transistor Amp is formed as a diffusionlayer common to a source-drain region 34 of the selection transistorSEL.

In this regard, no element isolation region 14 may be disposed betweenthe above-described transfer gate TRG and the above-described resettransistor RST, and a diffusion layer common to the above-describedtransfer gate TRG and the above-described reset transistor RST may bedisposed.

Furthermore, regarding a group of transistors in the above-describedpixel portion 12, although not shown in the drawing, a transfer gateTRG, a selection transistor SEL, an amplifying transistor Amp, and areset transistor RST may be sequentially disposed in series while beingconnected to the above-described photoelectric conversion portion 21.

A gate insulating film 31 of each of the above-described transfer gateTRG, the reset transistor RST, the amplifying transistor Amp, and theselection transistor SEL, which are MOS transistors 30 in theabove-described pixel portion 12, is composed of a silicon oxynitridefilm.

Moreover, an insulating film 51 of each MOS transistor in theabove-described peripheral circuit portion 13 is composed of a siliconoxynitride film.

This silicon oxynitride film has a positive fixed charge in the film ascompared with that in a silicon oxide film.

A silicon oxynitride film is not disposed just above the photoelectricconversion portion 21 in the above-described pixel portion 12, but, forexample, silicon oxide films serving as an oxide film 133 and an oxidefilm 134 are disposed.

In this regard, as is indicated by a schematic configuration sectionalview shown in FIG. 3, a reset transistor RST, an amplifying transistorAmp, and a selection transistor SEL, which are MOS transistors 30 in thepixel portion 12, may be isolated by element isolation regions 14. Inthis case, the arrangement of the transistors does not have to followthe above-described order.

In the above-described solid-state imaging device 1, the gate insulatingfilms 51 and 31 of the individual MOS transistors 50 and 30 in theperipheral circuit portion 13 and the pixel portion 12 are composed ofsilicon oxynitride films. Therefore, an increase in tunnel current canbe suppressed. Furthermore, since the oxide film 133 and the oxide film134 instead of a silicon oxynitride film are disposed just above thephotoelectric conversion portion 21, deterioration in white defect dueto a fixed charge in the film just above the photoelectric conversionportion 21 can be prevented, whereas this is a problem with respect tothe silicon oxynitride film.

Next, a second example of a solid-state imaging device according to anembodiment of the present invention will be described with reference toa schematic configuration sectional view of a pixel portion as shown inFIG. 4 and a schematic configuration sectional view of a peripheralcircuit portion as shown in FIG. 5. The pixel portion shown in FIG. 4and the peripheral circuit portion shown in FIG. 5 are disposed in thesame semiconductor substrate.

As shown in FIG. 4 and FIG. 5, a semiconductor substrate 11 includes apixel portion 12 provided with a photoelectric conversion portion 21,which photoelectrically converts incident light to obtain an electricsignal, and a peripheral circuit portion 13 disposed on the periphery ofthe pixel portion 12.

In the semiconductor substrate 11 in the above-described pixel portion12, the photoelectric conversion portion 21 is disposed. A transfer gateTRG, a reset transistor RST, an amplifying transistor Amp, and aselection transistor SEL are sequentially disposed in series while beingconnected to the photoelectric conversion portion 21. Theabove-described photoelectric conversion portion 21 is formed from, forexample, a photodiode.

Furthermore, the above-described transfer gate TRG and pixeltransistors, i.e. the reset transistor RST, the amplifying transistorAmp, and the selection transistor SEL, are isolated by an elementisolation region 14.

Therefore, a source-drain region 34 of the above-described amplifyingtransistor Amp serves as a diffusion layer common to a source-drainregion 35 of the reset transistor RST, and a source-drain region 35 ofthe above-described amplifying transistor Amp serves as a diffusionlayer common to a source-drain region 34 of the selection transistorSEL.

In this regard, no element isolation region 14 may be disposed betweenthe above-described transfer gate TRG and the above-described resettransistor RST, and a diffusion layer common to the above-describedtransfer gate TRG and the above-described reset transistor RST may bedisposed.

Furthermore, regarding a group of transistors in the above-describedpixel portion 12, although not shown in the drawing, a transfer gateTRG, a selection transistor SEL, an amplifying transistor Amp, and areset transistor RST may be sequentially disposed in series while beingconnected to the above-described photoelectric conversion portion 21.

A gate insulating film 31 of each of the above-described transfer gateTRG, the reset transistor RST, the amplifying transistor Amp, and theselection transistor SEL, which are MOS transistors 30 in theabove-described pixel portion 12 is composed of a silicon oxynitridefilm. This gate insulating film 31 is also disposed just below a firstsidewall 33 disposed on the side of each gate electrode 32.

Moreover, an insulating film 51 of each MOS transistor in theabove-described peripheral circuit portion 13 is composed of a siliconoxynitride film. This gate insulating film 51 is also disposed justbelow a second sidewall 53 disposed on the side of each gate electrode52.

This silicon oxynitride film has a positive fixed charge in the film ascompared with that in a silicon oxide film.

A silicon oxynitride film is not disposed just above the photoelectricconversion portion 21 in the above-described pixel portion 12, but, forexample, a silicon oxide film serving as an oxide film 134 is disposed.

In this regard, as is indicated by a schematic configuration sectionalview shown in FIG. 6, a reset transistor RST, an amplifying transistorAmp, and a selection transistor SEL, which are MOS transistors 30 in thepixel portion 12, may be isolated by element isolation regions 14. Inthis case, the arrangement of the transistors is not necessarily followthe above-described order.

In the above-described solid-state imaging device 2, the gate insulatingfilms 51 and 31 of the individual MOS transistors 50 and 30 in theperipheral circuit portion 13 and the pixel portion 12 are composed ofsilicon oxynitride films. Therefore, an increase in tunnel current canbe suppressed. Furthermore, since the oxide film 134 instead of asilicon oxynitride film is disposed just above the photoelectricconversion portion 21, deterioration in white defect and dark currentdue to a fixed charge in the film just above the photoelectricconversion portion 21 can be prevented, whereas this is a problem withrespect to the silicon oxynitride film.

In this regard, in the solid-state imaging device 2, gate insulatingfilms 31 and 51 composed of silicon oxynitride films remain just belowthe individual first and second sidewalls 33 and 53. Consequently, it isfeared that deterioration in white defect due to a positive fixed chargeat an edge of the transfer gate TRG occurs to some extent as comparedwith that of the solid-state imaging device 1 of the above-describedfirst example. However, deterioration in white defect due to a fixedcharge can be suppressed as compared with a solid-state imaging devicein the related art.

Next, a method for manufacturing a solid-state imaging device accordingto an embodiment of the present invention will be described withreference to sectional views of production steps shown in FIG. 7 to FIG.40.

As shown in FIG. 7, for example, a silicon substrate is used as asemiconductor substrate 11.

A pad oxide film 111 and a silicon nitride film 112 are formed on theabove-described semiconductor substrate 11.

The above-described pad oxide film 111 is formed through oxidation of asurface of the semiconductor substrate 11 by, for example, a thermaloxidation method. This pad oxide film 111 is formed having a thicknessof, for example, 15 nm.

Subsequently, the silicon nitride film 112 is formed on theabove-described pad oxide film 111 by, for example, a low pressure CVD(LP-CVD) method. This silicon nitride film 112 is formed having athickness of, for example, 160 nm.

In the above-described configuration, the structure is silicon nitridefilm/pad oxide film. However, the structure may be silicon nitridefilm/polysilicon film or amorphous silicon film/pad oxide film.

Then, as shown in FIG. 8, on the above-described silicon nitride film112, a resist mask (not shown in the drawing) is formed having anopening portion in a region in which an element isolation region isformed. Thereafter, an opening portion 113 is formed in theabove-described silicon nitride film 112 and the above-described padoxide film 111 through etching.

Regarding the above-described etching, for example, a reactive ionetching (RIE) apparatus, an electron cyclotron resonance (ECR) etchingapparatus, or the like can be used. After the working, theabove-described resist mask is removed with an ashing apparatus or thelike.

Next, as shown in FIG. 9, element isolation trenches (first elementisolation trench 114 and second element isolation trench 115) are formedin the above-described semiconductor substrate 11 by using theabove-described silicon nitride film 112 as an etching mask. In thisetching, for example, an RIE apparatus, an ECR etching apparatus, or thelike is used.

Initially, first etching of the second element isolation trench 115 (andthe first element isolation trench 114) in the peripheral circuitportion (and pixel portion) is conducted. At this time, the depth ofeach of the first and the second element isolation trenches 114 and 115is 50 nm to 160 nm.

Although not shown in the drawing, a resist mask is formed on the pixelportion, and regarding only the peripheral circuit portion, secondetching is further conducted to extend the element isolation trench 115in such a way that the depth of the second element isolation trench 115in only the peripheral circuit portion becomes, for example, 0.3 μm.Then, the resist mask is removed.

As described above, the depth of the first element isolation trench 114in the pixel portion is made small and, thereby, an effect ofsuppressing an occurrence of white defect due to etching damage isexerted. Since the depth of the first element isolation trench 114 ismade small, an effective area of the photoelectric conversion portionincreases and, thereby, there is an effect of increasing the amount ofsaturation charge (Qs). In order to realize a high-speed operation, aparasitic capacitance between the wiring and the substrate is reduced byincreasing the STI depth of the second element isolation region in theperipheral circuit portion.

Subsequently, although not shown in the drawing, a liner film is formed.This liner film is formed through thermal oxidation at, for example,800° C. to 900° C. The above-described liner film may be a silicon oxidefilm, a nitrogen-containing silicon oxide film, or a CVD silicon nitridefilm. The film thickness thereof is specified to be about 4 nm to 10 nm.

Although not shown in the drawing, in order to suppress a dark current,boron (B) ions are implanted into the pixel portion 12 by using a resistmask. As for an example of the ion implantation condition, theimplantation energy is set at about 10 keV, and the amount of dose isset at 1×10¹²/cm² to 1×10¹⁴/cm². As the boron concentration around thefirst element isolation trench 114, in which the element isolationregion is formed, in the pixel portion increases, a dark current issuppressed, and a parasitic transistor operation is suppressed. However,if the boron concentration becomes too high, the area of photodiode, inwhich the photoelectric conversion portion is formed, becomes small, theamount of saturation charge (Qs) becomes small. Therefore, the boronconcentration is specified to be the above-described amount of dose.

Next, as shown in FIG. 10, an insulating film is formed on theabove-described silicon nitride film 112 in such a way as to fill theinside of the above-described second element isolation trench 115 (andthe first element isolation trench 114). This insulating film is formedthrough deposition of silicon oxide by, for example, a high-densityplasma CVD method.

Thereafter, an excess insulating film on the above-described siliconnitride film 112 is removed through, for example, chemical mechanicalpolishing (CMP) while the insulating film is left in the inside of thesecond element isolation trench 115 (and the first element isolationtrench 114), so as to form the second element isolation region 15 (firstelement isolation region 14) from the above-described insulating film.In the above-described CMP, the silicon nitride film 112 serves as astopper and terminates the CMP.

The first element isolation region 14 is formed to become shallower thanthe second element isolation region 15 in the peripheral circuit portion13. However, since the stopper is the same silicon nitride film 112, theamount of protrusion for element isolation is specified to be equal tothat of the second element isolation region 15. Here, regarding theamount of protrusion of the first element isolation region 14 and theamount of protrusion of the second element isolation region 15, theamounts of protrusion within the range of working variations based onthe production working precision are determined to be equal. That is,regarding the film thickness of the silicon nitride film 112 used as themask in trench working, in general, the wafer in-plane variations areabout 10% with respect to a silicon nitride film having a thickness ofabout 160 nm. Polishing variations through chemical mechanical polishing(CMP) are about ±20 nm to ±30 nm. Therefore, even if it is devised insuch a way that variations in the pixel portion and variations in theperipheral circuit portion become equal, variations of 20 nm to 30 nmmay occur. Consequently, in the case where the pixel portion and theperipheral circuit portion are compared at any place in a chip surfacethrough strict observation and a difference in height of protrusionbetween the pixel portion and the peripheral circuit portion is within30 nm even when the heights of protrusion are not completely equal, theheights are assumed to be equal in the present invention.

Finally, the heights of protrusion of the first element isolation region14 and the second element isolation region 15 are set at a low level of,for example, about 0 to 20 nm from a silicon surface.

Next, as shown in FIG. 11, in order to adjust the height of the firstelement isolation region 14 from the surface of the semiconductorsubstrate 11, wet etching of the oxide film is conducted. The amount ofetching of the oxide film is specified to be, for example, 40 nm to 100nm.

Subsequently, the above-described silicon nitride film 112 (refer toFIG. 10) is removed so as to expose the pad oxide film 111. Theabove-described silicon nitride film 112 is removed through, forexample, wet etching with hot phosphoric acid.

Then, as shown in FIG. 12, in the state in which the pad oxide film 111is disposed, a p-well 121 is formed in the semiconductor substrate 11through ion implantation by using a resist mask (not shown in thedrawing) provided with an opening portion above a region in which thep-well is formed. Furthermore, channel ion implantation is conducted.Thereafter, the above-described resist mask is removed.

Moreover, in the state in which the pad oxide film 111 is disposed, ann-well 123 is formed in the semiconductor substrate 11 through ionimplantation by using a resist mask (not shown in the drawing) providedwith an opening portion above a region in which the n-well is formed.Furthermore, channel ion implantation is conducted. Thereafter, theabove-described resist mask is removed.

The ion implantation of the above-described p-well 121 is conducted byusing boron (B) as an ion implantation species while the implantationenergy is set at, for example, 200 keV and the amount of dose is set at,for example, 1×10¹³ cm⁻². The channel ion implantation of theabove-described p-well 121 is conducted by using boron (B) as an ionimplantation species while the implantation energy is set at, forexample, 10 keV to 20 keV and the amount of dose is set at, for example,1×10¹¹ cm⁻² to 1×10¹³ cm⁻².

The ion implantation of the above-described n-well 123 is conducted byusing, for example, phosphorus (P) as an ion implantation species whilethe implantation energy is set at, for example, 200 keV and the amountof dose is set at, for example, 1×10¹³ cm⁻². The channel ionimplantation of the above-described n-well 123 is conducted by usingarsenic (As) as an ion implantation species while the implantationenergy is set at, for example, 100 keV and the amount of dose is set at,for example, 1×10¹¹ cm⁻² to 1×10¹³ cm⁻².

Moreover, although not shown in the drawing, ion implantation forforming a photodiode in the photoelectric conversion portion isconducted so as to form a p-type region. For example, boron (B) ision-implanted into the surface of the semiconductor substrate in whichthe photoelectric conversion portion is formed, arsenic (As) orphosphorus (P) is ion-implanted into a deeper region so as to form ann-type region joined to a lower portion of the above-described p-typeregion. In this manner, a pn-junction photoelectric conversion portionis formed.

Next, as shown in FIG. 13, the pad oxide film 111 (refer to FIG. 12) isremoved through, for example, wet etching.

Subsequently, a thick gate insulating film 51H for high voltages isformed on the semiconductor substrate 11. The film thickness is about7.5 nm with respect to a transistor for a supply voltage of 3.3 V andabout 5.5 nm with respect to a transistor for 2.5 V. Thereafter, aresist mask (not shown in the drawing) is formed on the thick gateinsulating film 51H for high voltages, and the thick gate insulatingfilm 51H formed on transistor regions for low voltages is removed.

After the above-described resist mask is removed, thin gate insulatingfilms 51L are formed in the regions of transistor for low voltages onthe semiconductor substrate 11. The film thickness of a transistor for asupply voltage of 1.0 V is specified to be about 1.2 nm to 1.8 nm. Atthe same time, thin gate insulating films (not shown in the drawing) areformed from a silicon oxynitride film also in the transistor-formingregions in the pixel portion.

This silicon oxynitride film has a positive fixed charge in the film ascompared with that in a silicon oxide film.

The above-described silicon oxynitride film is formed in an atmospherecontaining nitrogen atoms to become, for example, dinitrogen monoxide(N₂O), nitrogen monoxide (NO), or nitrogen dioxide (NO₂). For example, athermal oxidation and plasma nitridation method, a thermaloxynitridation method, or the like is adopted. In this regard, if thesilicon substrate is simply directly subjected to thermal nitridation,there is a merit in reducing the number of steps, but a lot of nitrogenis distributed at a silicon (Si) interface, so that the deviceperformance deteriorates. Furthermore, deterioration of the mobility isinvited along with an increase in interface state. Therefore, filmformation by the thermal oxidation and plasma nitridation method ispreferable.

Moreover, there is a problem in that NBTI of PMOS deteriorates andreduction in reliability may be invited. In this regard, an oxide filmof a high-voltage transistor is increased by this silicon oxynitridefilm, and nitrogen is introduced, so that a positive fixed charge may begenerated as well.

The above-described positive fixed charge shifts the threshold voltageVth of an nMOSFET to a lower level and the threshold voltage Vth of apMOSFET to a higher level as compared with that in the case where thegate insulating film is formed from a pure oxide film.

In addition, in the case where the gate insulating film is specified tobe the silicon oxynitride film, the physical film thickness increases,but the dielectric constant increases, so that electrical, equivalentoxide film thickness decreases and the gate leakage current can bereduced.

Moreover, in the case where polysilicon is used for the gate electrodeof the pMOSFET, there is an effect of preventing boron (B) in the gateelectrode from penetrating the gate insulating film and suppressingvariations in the characteristics of the pMOSFET.

The above-described silicon oxynitride film is used in the generation ofa film thickness of 3.5 nm or less and a gate length of 0.18 μm or less.Such a silicon oxynitride film has a high nitrogen concentration at asilicon (Si) interface and, therefore, a method in which common thermaloxidation is conducted and plasma nitriding is conducted in such a waythat the nitrogen concentration in the vicinity of a thermal oxidationfilm surface becomes high and the concentration at the silicon (Si)interface is minimized is preferable. The film quality is improvedthrough RTA immediately after the plasma nitriding.

In general, the method through plasma nitriding is used in thegeneration of a film thickness of 2.5 nm or less and a gate length of0.15 μm or less. The characteristics of the imaging element can beimproved to a great extent by a method in which a thermal oxidation filmis formed and, thereafter, plasma nitriding is conducted as comparedwith that by a method in which a silicon substrate is directly nitridedand oxidized to form a silicon oxynitride film.

Hereafter, in the drawings, the thick gate insulating film 51H and thethin gate insulating film 51L are drawn having the same film thicknessfor the sake of convenience.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 14 and a sectional view of a peripheral circuit portion shown inFIG. 15, a gate-electrode-forming film 131 is formed on the gateinsulating film 51 (51H, 51L) and a gate insulating film 31. Theabove-described gate-electrode-forming film 131 is formed throughdeposition of polysilicon by, for example, an LP-CVD method. The filmthickness of deposition is specified to be 150 nm to 200 nm with respectto the 90-nm node, although depending on the technology node.

In general, the film thickness tends to become small on a node basis inorder to avoid an increase in gate aspect ratio from the viewpoint ofcontrollability of working.

In this regard, silicon germanium (SiGe) may be used instead ofpolysilicon as a measure against gate depletion. This gate depletionrefers to a problem in which as the film thickness of the gate oxidefilm decreases, not only an influence of the physical film thickness ofthe gate oxide film, but also an influence of the film thickness of adepletion layer in the gate polysilicon becomes significant, theeffective film thickness of the gate oxide film does not become small,and the transistor performance deteriorates.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 16 and a sectional view of a peripheral circuit portion shown inFIG. 17, measures against gate depletion are taken. Initially, a resistmask 132 is formed on a pMOS-transistor-forming region and theabove-described gate-electrode-forming film 131 in annMOS-transistor-forming region is doped with an n-type impurity. Thisdoping is conducted through ion implantation of, for example, phosphorus(P) or arsenic (As). The amount of ion implantation is about 1×10¹⁵/cm²to 1×10¹⁶/cm². Thereafter, the above-described resist mask 132 isremoved.

Subsequently, although not shown in the drawing, a resist mask (notshown in the drawing) is formed on the nMOS-transistor-forming regionand the above-described gate-electrode-forming film 131 in thepMOS-transistor-forming region is doped with a p-type impurity. Thisdoping is conducted through ion implantation of, for example, boron (B),boron difluoride (BF₂), or indium (In). The amount of ion implantationis about 1×10¹⁵/cm² to 1×10¹⁶/cm². Thereafter, the above-describedresist mask is removed.

Either of the above-described ion implantations is conducted on ahead.

Regarding each ion implantation described above, in order to prevent theion-implanted impurity from penetrating just below the gate insulatingfilm, ion implantation of nitrogen (N₂) may be combined.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 18 and a sectional view of a peripheral circuit portion shown inFIG. 19, a resist mask (not shown in the drawing) for forming individualgate electrodes is formed on the above-described gate-electrode-formingfilm 131. The above-described gate-electrode-forming film 131 issubjected to etching through reactive ion etching by using this resistmask as an etching mask, so that gate electrodes 32 of individual MOStransistors in the pixel portion 12 and gate electrodes 52 of individualMOS transistors in the peripheral circuit portion 13 are formed.

Subsequently, as is indicated by a sectional view of a pixel portionshown in FIG. 20 and a sectional view of a peripheral circuit portionshown in FIG. 21, the above-described gate insulating films 31 and 51are removed from regions other than the regions which are just below theabove-described gate electrodes 32 and 52 and in which the gateinsulating films 31 and 51 are left. It is desirable that removal of thegate insulating films 31 and 51 is conducted through wet etching inorder to prevent an etching damage to the substrate.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 22 and a sectional view of a peripheral circuit portion shown inFIG. 23, the surfaces of the above-described individual gate electrodes32 and 52 are oxidized so as to form oxide films 133.

The film thickness of the above-described oxide film 133 is specified tobe, for example, 1 nm to 10 nm. Furthermore, the above-described oxidefilms 133 are formed on the upper surfaces, as well as the sidewalls, ofthe above-described gate electrodes 32 and 52.

Moreover, the edge portions of the above-described gate electrodes 32and 52 are rounded in the above-described oxidation step and, thereby,an effect of improving the voltage resistance of the oxide film can beexerted.

In addition, an etching damage can be reduced by conducting theabove-described heat treatment.

Furthermore, in the working of the above-described gate electrode, evenif the above-described gate insulating film disposed on thephotoelectric conversion portion 21 is removed, the above-describedoxide film 133 is formed also on the photoelectric conversion portion21. Consequently, when a resist film is formed in the followinglithography technology, direct mounting on the silicon surface isavoided. Therefore, contamination due to this resist can be prevented.Hence, this serves as a measure for preventing an occurrence of whitedefect with respect to the photoelectric conversion portion 21 in thepixel portion 12.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 24 and a sectional view of a peripheral circuit portion shown inFIG. 25, LDDs 38 and 39 and the like of individual MOS transistors inthe pixel portion 12 are formed and, in addition, LDDs 61, 62, 63, and64 and the like of individual MOS transistors in the peripheral circuitportion 13 are formed. At this time, the LDD 39 of a reset transistorand the LDD 38 of an amplifying transistor are formed as a commondiffusion layer, and the LDD 39 of the amplifying transistor and the LDD38 of a selection transistor are formed as a common diffusion layer.

Initially, regarding NMOS transistors formed in the peripheral circuitportion 13, pocket diffusion layers 65 and 66 are formed in thesemiconductor substrate 11 on both sides of the individual gateelectrodes 52 (52N). These pocket diffusion layers 65 and 66 are formedthrough ion implantation and, for example, boron difluoride (BF₂), boron(B), or indium (In) is used as an ion implantation species. The amountof dose is set at, for example, 1×10¹²/cm² to 1×10¹⁴/cm².

Furthermore, LDDs 61 and 62 are formed in the semiconductor substrate 11on both sides of the individual gate electrodes 52 (52N). The LDDs 61and 62 are formed through ion implantation and, for example, arsenic(As) or phosphorus (P) is used as an ion implantation species. Theamount of dose is set at, for example, 1×10¹³/cm² to 1×10¹⁵/cm².

Regarding MOS transistors formed in the above-described pixel portion12, LDDs 38 and 39 are formed in the semiconductor substrate 11 on bothsides of the individual gate electrodes 32. The LDDs 38 and 39 areformed through ion implantation and, for example, arsenic (As) orphosphorus (P) is used as an ion implantation species. The amount ofdose is set at, for example, 1×10¹³/cm² to 1×10¹⁵/cm². In addition,pocket diffusing layers may be formed.

Regarding the MOS transistors formed in the above-described pixelportion 12, no LDD may be formed from the viewpoint of reduction insteps. Alternatively, the ion implantation may be combined with the LDDion implantation of the MOS transistors formed in the peripheral circuitportion 13.

Regarding PMOS transistor-forming-regions in the peripheral circuitportion 13, pocket diffusion layers 67 and 68 are formed in thesemiconductor substrate 11 on both sides of the individual gateelectrodes 52 (52P). These pocket diffusion layers 67 and 68 are formedthrough ion implantation and, for example, arsenic (As) or phosphorus(P) is used as an ion implantation species. The amount of dose is setat, for example, 1×10¹²/cm² to 1×10¹⁴/cm².

Furthermore, LDDs 63 and 64 are formed in the semiconductor substrate 11on both sides of the individual gate electrodes 52 (52P). The LDDs 63and 64 are formed through ion implantation and, for example, borondifluoride (BF₂), boron (B), or indium (In) is used as an ionimplantation species. The amount of dose is set at, for example,1×10¹²/cm² to 1×10¹⁵/cm².

As for a technology to suppress channeling in implantation,preamorphization may be conducted by, for example, conducting ionimplantation of germanium (Ge) before the pocket ion implantation of theNMOS transistors and PMOS transistors in the peripheral circuit portion.Furthermore, after the LDD is formed, a rapid thermal annealing (RTA)treatment at about 800° C. to 900° C. may be added in order to allowimplantation defects, which cause transient enhanced diffusion (TED) andthe like, to become small.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 26 and a sectional view of a peripheral circuit portion shown inFIG. 27, a silicon oxide (SiO₂) film 134 is formed all over the pixelportion 12 and the peripheral circuit portion 13. This silicon oxidefilm 134 is formed from an deposition film, e.g., a non-doped silicateglass (NSG), low pressure tetra ethyl ortho silicate (LP-TEOS), or hightemperature oxide (HTO) film. The above-described silicon oxide film 134is formed having a film thickness of, for example, 5 nm to 20 nm.

Subsequently, a silicon nitride film 135 is formed on theabove-described silicon oxide film 134. As for this silicon nitride film135, for example, a silicon nitride film formed through LP-CVD is used.The film thickness thereof is specified to be, for example, 10 nm to 100nm.

The above-described silicon nitride film 135 may be an ALD siliconnitride film formed by an atomic layer deposition method in which filmcan be formed at low temperatures.

Regarding the above-described silicon oxide film 134 just below theabove-described silicon nitride film 135, as the film thickness thereofis reduced on the photoelectric conversion portion 21 in the pixelportion 12, reflection of light is prevented, so that the sensitivity ofthe photoelectric conversion portion 21 is improved.

Then, if necessary, a third layer, i.e. silicon oxide (SiO₂) film 136,is deposited on the above-described silicon nitride film 135. Thissilicon oxide film 136 is formed from a deposition film of NSG, LP-TEOS,HTO, or the like. This silicon oxide film 136 is formed having a filmthickness of, for example, 10 nm to 100 nm.

Therefore, a sidewall-forming film 137 becomes a three-layer structurefilm composed of silicon oxide film 136/silicon nitride film 135/siliconoxide film 134. In this regard, the sidewall-forming film 137 may be atwo-layer structure film composed of silicon nitride film/silicon oxidefilm. The sidewall-forming film 137 composed of a three-layer structurefilm will be described below.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 28 and a sectional view of a peripheral circuit portion shown inFIG. 29, the above-described silicon oxide film 136 disposed as theuppermost layer is subjected to etch back so as to remain on the sideportion sides of the individual gate electrodes 32 and 52 and the like.The above-described etch back is conducted through, for example,reactive ion etching (RIE). Regarding this etch back, etching is stoppedby the above-described silicon nitride film 135. Since the etching isstopped by the above-described silicon nitride film 135, as describedabove, an etching damage to the photoelectric conversion portion 21 inthe pixel portion 12 can be reduced and, thereby, white defects can bereduced.

Subsequently, as is indicated by a sectional view of a pixel portionshown in FIG. 30 and a sectional view of a peripheral circuit portionshown in FIG. 31, a resist mask 142 is formed all over the photoelectricconversion portion 21 in the pixel portion 12 and on a part of thetransfer gate TRG.

Thereafter, the above-described silicon nitride film 135 and theabove-described silicon oxide film 134 are subjected to etch back, sothat the first sidewall 33 and the second sidewall 53, each composed ofthe silicon oxide film 134, the silicon nitride film 135, and thesilicon oxide film 136, are formed on the sidewall portions of theindividual gate electrodes 32 and 52. At this time, the silicon nitridefilm 135 and the silicon oxide film 134 on the photoelectric conversionportion 21 are not etched because of being covered with the resist mask142.

Then, as is indicated by a sectional view of a pixel portion shown inFIG. 32 and a sectional view of a peripheral circuit portion shown inFIG. 33, a resist mask (not shown in the drawing) with openings abovethe NMOS-transistor-forming regions in the peripheral circuit portion 13is formed, and by using this, deep source-drain regions 54 (54N) and 55(55N) are formed in the NMOS-transistor-forming regions in theperipheral circuit portion 13 through ion implantation. That is, theabove-described source-drain regions 54N and 55N are formed on bothsides of the individual gate electrodes 52 in the semiconductorsubstrate 11 with the above-described LDDs 58 and 59 and the liketherebetween. The above-described source-drain regions 54N and 55N areformed through ion implantation and, for example, arsenic (As) orphosphorus (P) is used as an ion implantation species. The amount ofdose is set at, for example, 1×10¹⁵/cm² to 1×10¹⁶/cm². Thereafter, theabove-described resist mask is removed.

Next, a resist mask (not shown in the drawing) with openings above theNMOS-transistor-forming regions in the pixel portion 12 is formed, andby using this, deep source-drain regions 34 and 35 are formed in theNMOS-transistor-forming regions in the pixel portion 12 through ionimplantation. That is, the above-described source-drain regions 34 and35 are formed on both sides of the individual gate electrodes 32 in thesemiconductor substrate 11 with the above-described LDDs 38 and 39 andthe like therebetween. The above-described source-drain regions 34 and35 are formed through ion implantation and, for example, arsenic (As) orphosphorus (P) is used as an ion implantation species. The amount ofdose is set at, for example, 1×10¹⁵/cm² to 1×10¹⁶/cm². Thereafter, theabove-described resist mask is removed.

This ion implantation may be combined with the ion implantation forforming the above-described source-drain regions 54N and 55N of the NMOStransistors in the above-described peripheral circuit portion.

In the above-described ion implantation, the source-drain region 34 ofthe above-described amplifying transistor is formed as a diffusion layercommon to the source-drain region 35 of the reset transistor, and thesource-drain region 35 of the above-described amplifying transistor isformed as a diffusion layer common to the source-drain region 34 of theselection transistor.

In the formation of the source-drain regions described in InternationalPatent Publication WO 2003/096421 in the related art, the ionimplantation through three layers and the ion implantation in the statein which no film is disposed are conducted and, therefore, it isdifficult to combine them.

Subsequently, a resist mask (not shown in the drawing) with openingsabove the PMOS-transistor-forming regions in the peripheral circuitportion 13 is formed, and by using this, deep source-drain regions 54(54P) and 55 (55P) are formed in the PMOS-transistor-forming regions inthe peripheral circuit portion 13 through ion implantation. That is, theabove-described source-drain regions 54P and 55P are formed on bothsides of the individual gate electrodes 52 in the semiconductorsubstrate 11 with LDDs 58 and 59 and the like therebetween. Theabove-described source-drain regions 54P and 55P are formed through ionimplantation and, for example, boron (B) or boron difluoride (BF₂) isused as an ion implantation species. The amount of dose is set at, forexample, 1×10¹⁵/cm² to 1×10¹⁶/cm². Thereafter, the above-describedresist mask is removed.

Then, activation annealing of individual source-drain regions isconducted. This activation annealing is conducted at, for example, about800° C. to 1,100° C. As for the apparatus to conduct this activationannealing, for example, a rapid thermal annealing (RTA) apparatus, aspike-RTA apparatus, and the like may be used.

Before activation annealing of the above-described source-drain regions,a sidewall-forming film 137 covering the photoelectric conversionportion 21 is cut from the sidewall 33 formed from the sidewall-formingfilm 137 on the gate electrode 32 of the MOS transistor in the pixelportion 12. Consequently, deterioration due to a stress resulting fromstress memorization technique (SMT) in the related art does not occur.

Therefore, white defects, random noises, and the like can be improved.

Furthermore, the photoelectric conversion portion 21 is covered with thesidewall-forming film 137, and the resist mask in the ion implantationfor forming the source-drain regions is formed on the photoelectricconversion portion 21 with the sidewall-forming film 137 therebetween.Therefore, the resist mask is not directly disposed on the surface ofthe photoelectric conversion portion 21. Consequently, the photoelectricconversion portion 21 is not contaminated by contaminants in the resist,so that increases in white defect, dark current, and the like can besuppressed.

Moreover, in the ion implantation for forming the source-drain regions,the ion implantation is conducted without passing through a film, sothat the depth can be set while a high concentration is ensured at thesurface. Therefore, an increase in series resistance in the source-drainregions can be suppressed.

In addition, the above-described sidewall-forming film 137 covering theabove-described photoelectric conversion portion 21 is used as a firstsilicide block film 71 in the following step.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 34 and a sectional view of a peripheral circuit portion shown inFIG. 35, a second silicide block film 72 is formed all over the pixelportion 12 and the peripheral circuit portion 13. The second silicideblock film 72 is formed from a laminate film composed of a silicon oxide(SiO₂) film 138 and a silicon nitride (Si₃N₄) film 139. For example, theabove-described silicon oxide film 138 is formed having a film thicknessof, for example, 5 nm to 40 nm, the above-described silicon nitride film139 is formed having a film thickness of, for example, 5 nm to 60 nm.

As for the above-described silicon oxide film 138, NSG, LP-TEOS, an HTOfilm, and the like are used. As for the above-described silicon nitridefilm 139, ALD-SiN, a plasma nitriding film, LP-SiN, and the like areused. If the film formation temperatures of these two layers of filmsare high, inactivation of boron occurs in the gate electrode of thePMOSFET, and the current drivability of the PMOSFET deteriorates becauseof gate depletion. Consequently, it is desirable that the film formationtemperature is low relative to the film formation temperature of thesidewall-forming film 137. It is desirable that the film formationtemperature is, for example, 700° C. or lower.

Subsequently, as is indicated by a sectional view of a pixel portionshown in FIG. 36 and a sectional view of a peripheral circuit portionshown in FIG. 37, a resist mask 141 is formed to almost cover theMOS-transistor-forming regions in the pixel portion 12. This resist mask141 is used as an etching mask, and the above-described second silicideblock film 72 on the photoelectric conversion portion 21 (including apart of the second silicide block film 72 on the transfer gate TRG) inthe above-described pixel portion 12 and on the peripheral circuitportion 13 through etching.

As a result, the silicon nitride film 135 and the silicon oxide film 134are disposed on the photoelectric conversion portion 21 in that orderfrom above, and a ripple in dispersion of light can be prevented. On theother hand, in the case where the above-described etching is notconducted, the silicon nitride film 139, the silicon oxide film 138, thesilicon nitride film 135, and the silicon oxide film 134 are disposed onthe photoelectric conversion portion 21 in that order from above, theincident light is multi-reflected and the ripple property in dispersionof light deteriorates. Since the ripple property deteriorates,chip-to-chip variations in dispersion of light increase. Therefore, inthe present embodiment, the second silicide block film 72 on thephotoelectric conversion portion 21 is peeled off intentionally.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 38 and a sectional view of a peripheral circuit portion shown inFIG. 39, silicide layers 56, 57, and 58 are formed on the source-drainregions 54 and 55 and the gate electrodes 52 of the individual MOStransistors 50 in the peripheral circuit portion 13.

As for the above-described silicide layers 56, 57, and 58, cobaltsilicide (CoSi₂), nickel silicide (NiSi), titanium silicide (TiSi₂),platinum silicide (PtSi), tungsten silicide (WSi₂), and the like areused.

As for examples of formation of the silicide layers 56, 57, and 58, anexample in which nickel silicide is formed will be described below.

Initially, a nickel (Ni) film is formed all over the surface. Thisnickel film is formed having a thickness of, for example, 10 nm by usinga sputtering apparatus, for example. Subsequently, an annealingtreatment is conducted at about 300° C. to 400° C., so that the nickelfilm and the substrate are allowed to react with silicon and, thereby, anickel silicide layer is formed. Thereafter, unreacted nickel is removedthrough wet etching. The silicide layers 56, 57, and 58 are formed bythis wet etching only on a silicon or polysilicon surface other than theinsulating film through self-align.

Then, an annealing treatment is conducted again at about 500° C. to 600°C. so as to stabilize the nickel silicide layer.

In the above-described silicidation step, no silicide layer is formed onthe source-drain regions 34 and 35 and the gate electrodes 32 of the MOStransistors in the pixel portion 12. This is for the purpose of avoidingincreases in white defect and dark current due to diffusion of the metalof silicide to the top of the photoelectric conversion portion 21.

Consequently, if the impurity concentrations on the surfaces of thesource-drain regions 34 and 35 of the MOS transistors in the pixelportion 12 are not high, the contact resistance increases significantly.In the present example, the impurity concentrations on the surfaces ofthe source-drain regions 34 and 35 can be increased and, therefore,there is an advantage that an increase in contact resistance can berelatively suppressed.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 40 and a sectional view of a peripheral circuit portion shown inFIG. 41, an etching stopper film 74 is formed all over the pixel portion12 and the peripheral circuit portion 13. The above-described etchingstopper film 74 is formed from, for example, a silicon nitride film. Asfor this silicon nitride film, for example, a silicon nitride filmformed by a low pressure CVD method or a silicon nitride film formed bya plasma CVD method is used. The film thickness of the silicon nitridefilm is specified to be, for example, 10 nm to 100 nm.

The above-described silicon nitride film exerts an effect of minimizingover etching in the etching for forming a contact hole. Furthermore, aneffect of suppressing an increase in junction leakage due to an etchingdamage.

Subsequently, as is indicated by a sectional view of a pixel portionshown in FIG. 42 and a sectional view of a peripheral circuit portionshown in FIG. 43, an interlayer insulating film 76 is formed on theabove-described etching stopper film 74. The above-described interlayerinsulating film 76 is formed from, for example, a silicon oxide film andis formed having a thickness of, for example, 100 nm to 1,000 nm. Theabove-described silicon oxide film is formed by, for example, a CVDmethod. As for this silicon oxide film, TEOS, PSG, BPSG, and the likeare used. Furthermore, a silicon nitride film and the like can also beused.

Then, the surface of the above-described interlayer insulating film 76is flattened. This flattening is conducted through, for example,chemical mechanical polishing (CMP).

After a resist mask (not shown in the drawing) for forming contact holesis formed, for example, the interlayer insulating film 76, the etchingstopper film 74, the second silicide block film 72, and the like in thepixel portion 12 are etched, so that contact holes 77, 78, and 79 areformed. Likewise, contact holes 81 and 82 are formed in the peripheralcircuit portion 13.

In the drawings, as an example, the contact holes 77, 78, and 79reaching the transfer gate TRG, the gate electrode 32 of the resettransistor RST, and the gate electrode 32 of the amplifying transistorAmp are shown in the pixel portion 12. Furthermore, the contact holes 81and 82 reaching the source-drain region 55 of the N channel (Nch) lowvoltage transistor and the source-drain region 55 of the P channel (Pch)low voltage transistor are shown in the peripheral circuit portion 13.However, contact holes reaching the gate electrodes and source-drainregions of other transistors are also formed at the same time, althoughnot shown in the drawing.

In the case where the above-described contact holes 77 to 79, 81, and 82are formed, in the first step, the interlayer insulating film 76 isetched. Then, etching is temporarily stopped on the etching stopper film74. Consequently, variations in film thickness of the interlayerinsulating film 76, variations in etching, and the like are absorbed. Inthe second step, the etching stopper film 74 composed of silicon nitrideis etched. Etching is further conducted so as to complete the contactholes 77 to 79, 81, and 82.

As for the above-described etching of the contact holes, for example,reactive ion etching apparatus is used.

Next, a plug 85 is formed in the inside of each of contact holes 77 to79, 81, and 82 with an adhesion layer (not shown in the drawing) and abarrier metal layer 84 therebetween.

As for the above-described adhesion layer, for example, a titanium (Ti)film, a tantalum (Ta) film, and the like are used. As for theabove-described barrier metal layer 84, for example, a titanium nitridefilm, a tantalum nitride film, and the like are used. These films areformed by, for example, a sputtering method or a CVD method.

Furthermore, as for the above-described plug 85, tungsten (W) is used.For example, the tungsten film is formed on the above-describedinterlayer insulating film 76 in such a way as to fill theabove-described contact holes 77 to 79, 81, and 82. Thereafter, thetungsten film on the interlayer insulating film 76 is removed, so thatthe plugs 85 composed of tungsten are formed in the individual contactholes 77 to 79, 81, and 82. This plug 85 may be formed from aluminum(Al), copper (Cu), and the like exhibiting still lower resistance,besides tungsten. For example, in the case where copper (Cu) is used,for example, a tantalum film is used as the adhesion layer and atantalum nitride film is used as the barrier metal layer 84.

Thereafter, a multilayer wiring is formed, although not shown in thedrawing. The multilayer wiring may be multi-layered to include twolayers, three layers, four layers, or more layers, as necessary.

Next, as is indicated by a sectional view of a pixel portion shown inFIG. 44, a waveguide 23 may be formed on the photoelectric conversionportion 21. Furthermore, a condenser lens 25 may be formed in order tocondense incident light on the photoelectric conversion portion 21.

Moreover, a color filter 27 to disperse light may be formed between theabove-described waveguide 23 and the condenser lens 25.

Regarding the above-described method for manufacturing a solid-stateimaging device, the gate insulating films 51 and 31 of the MOStransistors 50 and 30 in the peripheral circuit portion 13 and the pixelportion 12 are formed from silicon oxynitride films and, thereby,generation of a tunnel current can be prevented. Consequently, thetransistor characteristics of the peripheral circuit portion and thepixel portion are improved. Furthermore, since the silicon oxynitridefilm just above the photoelectric conversion portion 21 is removed,deterioration in white defect and dark current due to a fixed charge inthe silicon oxynitride film can be prevented. Consequently, there is anadvantage that the image quality is improved.

In the above-described method for manufacturing a solid-state imagingdevice, the step, in which the gate insulating films 31 and 51 areremoved from regions other than the regions just below the gateelectrodes 32 and 52 so as to leave the gate insulating films 31 and 51therein, is not necessarily conducted just after the gate electrodes 32and 52 are formed. Instead, a step, in which the gate insulating films31 and 51 are removed from regions other than the regions just below thegate electrodes 32 and 52 and the first and the second sidewalls 33 and53 so as to leave the gate insulating films 31 and 51 therein, may beconducted just after the first and the second sidewalls 33 and 53 areformed. It is desirable that removal of the gate insulating films 31 and51 is conducted through wet etching in order to prevent an etchingdamage.

In this case as well, the gate insulating films 51 and 31 of the MOStransistors 50 and 30 in the peripheral circuit portion 13 and the pixelportion 12 are formed from silicon oxynitride films and, thereby,generation of a tunnel current can be prevented. Furthermore, since theoxide film 134 instead of a silicon oxynitride film is disposed justabove the photoelectric conversion portion 21, deterioration in whitedefect and dark current due to a fixed charge in the film just above thephotoelectric conversion portion 21 can be prevented, whereas this is aproblem with respect to the silicon oxynitride film.

In this regard, the gate insulating films 31 and 51 composed of siliconoxynitride films remain just below the individual first and the secondsidewalls 33 and 53. Consequently, it is feared that deterioration inwhite defect due to a positive fixed charge at an edge of the transfergate TRG occurs to some extent as compared with that of the solid-stateimaging device 1 of the above-described first example. However,deterioration in white defect due to a fixed charge can be suppressed ascompared with a solid-state imaging device in the related art.

Furthermore, it is preferable that removal of the silicon oxynitridefilm used for the gate insulating film on the photoelectric conversionportion 21 is conducted in as late a step as possible from the viewpointof prevention of contamination of the photoelectric conversion portion21.

In the above-described first example, after the gate electrode isworked, an oxide film 133 is formed also on the photoelectric conversionportion 21 through oxidation of the sidewall of the gate electrode insuch a way that a resist mask is not formed directly on thephotoelectric conversion portion 21 in the downstream, so as to suppresscontamination.

However, the film thickness of the oxide film 133 exerts an influence onthe logic characteristics of the peripheral circuit, and if the filmthickness is too large, the current drivability of the transistordeteriorates so as to invite a reduction in an operation speed. It isdifficult to increase the film thickness of the oxide film 133 to alarge extent. For example, 10 nm or less is preferable.

In this regard, even if the film thickness of the oxide film 133 justabove the photoelectric conversion portion 21 is small, an influence ofcontamination exerted on deterioration in white defect is reduced byusing a resist which causes less contamination or conducting cleaningsufficiently, although the throughput is reduced. There is no problem inthe above-described cases. However, in the case where contamination dueto the resist is predominant, it is desirable that removal of thesilicon oxynitride film is conducted in as late a step as possible fromthe viewpoint of prevention of contamination of the photoelectricconversion portion 21.

Furthermore, regarding the working of the silicon nitride film to formthe sidewall, etching may be stopped by the silicon oxide film on thephotoelectric conversion portion 21 and, thereafter, wet peeling may beconducted so as to remove the silicon oxynitride film just above thephotodiode.

In that case, as described above, the silicon oxynitride films remainjust below the sidewalls 33 and 53, and deterioration in white defectand dark current resulting from that portion may occur. However, if thedegree of influence is larger than the influence of the above-describedresist contamination, the white defect and the dark current are improvedby peeling off the silicon oxynitride film on the photoelectricconversion portion 21.

As described above, in the present invention, the silicon oxynitridefilm is applied to the gate insulating film and, thereby, effects areexerted on an improvement of the operation speed of the MOS transistors50 in the peripheral circuit portion 13, suppression of a tunnelcurrent, suppression of an increase in power consumption and, inaddition, avoidance of deterioration in the imaging characteristics ofthe CMOS sensor.

Regarding the antireflection portion just above the photoelectricconversion portion 21, the silicon oxynitride film used for the gateinsulating film just above the photoelectric conversion portion 21 isremoved. Consequently, the structure just above the photoelectricconversion portion 21 is composed of silicon oxide (SiO₂)/siliconnitride (SiN)/silicon oxide (SiO₂). Since a multiple structure isavoided, deterioration of ripple does not occur, the characteristics ofdispersion of light are improved, and optimization is facilitated.

Furthermore, since deterioration in white defect can be prevented, it isnot necessary to set the P⁺ concentration of a buried photodiode at ahigh level in the photoelectric conversion portion 21. If the P⁺concentration is set at a high level, the area of the photodiode becomesrelatively small, so that a reduction in the amount of saturation charge(Qs) is invited. Moreover, the concentration at the end of the transfergate TRG increases and deterioration of an after image is invited. Onthe other hand, regarding the solid-state imaging devices 1 and 2according to an embodiment of the present invention, the P⁺concentration of the surface of the buried photodiode can be maderelatively low and, therefore, deterioration of the amount of saturationcharge (Qs), an after image, and the like can be prevented.

Moreover, the silicon oxynitride films serving as the gate insulatingfilms 31 and 51 in regions other than the regions just below the gateelectrodes 32 and 52 are removed, and a fresh oxide film 133 is formedon the photoelectric conversion portion 21. Consequently, thecontrollability of an implantation profile in each ion implantation isimproved.

In the explanation of each of the above-described examples, the P-wellis formed in the N-type substrate and photodiode of the photoelectricconversion portion 21 is formed from the P⁺ layer and the N⁺ layer inthat order from the upper layer. However, it is also possible to form anN-well in a P-type substrate and form the photodiode of thephotoelectric conversion portion 21 from the N⁺ layer and the P⁺ layerin that order from the upper layer.

Furthermore, in the explanation of the configuration of theabove-described manufacturing method, the above-described transfer gateand the pixel transistors, i.e. the reset transistor, the amplifyingtransistor, and the selection transistor, are isolated by the elementisolation region 14. Therefore, the source-drain region 34 of theabove-described amplifying transistor is formed as the diffusion layercommon to the source-drain region 35 of the reset transistor, and thesource-drain region 35 of the above-described amplifying transistor isformed as the diffusion layer common to the source-drain region 34 ofthe selection transistor SEL.

In this regard, even in the case where no element isolation region 14 isdisposed between the above-described transfer gate and theabove-described reset transistor and a diffusion layer common to theabove-described transfer gate TRG and the above-described resettransistor RST is disposed, a manufacturing method similar to thatdescribed above can be applied. In this case, the diffusion layer of thetransfer gate and the diffusion layer (source-drain region 34) of thereset transistor may be formed as a common diffusion layer.

Moreover, a manufacturing method similar to that described above can beapplied to the configuration in which the above-described resettransistor, the amplifying transistor, and the selection transistor areisolated individually by the element isolation regions 14.

In addition, regarding the group of transistors in the above-describedpixel portion 12, although not shown in the drawing, a transfer gateTRG, a selection transistor SEL, an amplifying transistor Amp, and areset transistor RST may be sequentially disposed in series while beingconnected to the above-described photoelectric conversion portion 21.

Next, an imaging apparatus according to an embodiment of the presentinvention will be described with reference to a block diagram shown inFIG. 45. This imaging apparatus includes the solid-state imaging deviceaccording to an embodiment of the present invention.

As shown in FIG. 45, an imaging apparatus 200 includes a solid-stateimaging device (not shown in the drawing) in an imaging portion 201. Alight-condensing optical portion 202 to form an image is provided on thelight-condensing side of this imaging portion 201. Furthermore, theimaging portion 201 is connected to a signal processing portion 203including a drive circuit to drive the imaging portion 201, a signalprocessing circuit to process the signal, which is photoelectricallyconverted with the solid-state imaging device, into an image, and thelike. Moreover, the image signal processed with the above-describedsignal processing portion 203 can be stored in an image storage portion(not shown in the drawing). In such an imaging apparatus 200, as for theabove-described solid-state imaging device, the solid-state imagingdevice 1 described in the above-described embodiment can be used.

Regarding the imaging apparatus 200 according to an embodiment of thepresent invention, since the solid-state imaging device 1 according toan embodiment of the present invention is included, the sensitivity ofthe photoelectric conversion portion of each pixel is ensuredsufficiently in a manner similar to that described above. Consequently,there is an advantage that the pixel characteristics are improved, forexample, white defects can be reduced.

Incidentally, the imaging apparatus 200 according to the presentinvention is not limited to the above-described configuration and can beapplied to any imaging apparatus having a configuration including thesolid-state imaging device.

The above-described solid-state imaging device 1 may be in the form ofone chip or in the form of a module in which an imaging portion and asignal processing portion or an optical system are packaged collectivelyand which has an imaging function. Furthermore, the present inventioncan be applied to the above-described imaging apparatus. In this case,the imaging apparatus exerts an effect of improving an image quality.Here, the imaging apparatus refers to, for example, cameras and portableapparatuses having an imaging function. Furthermore, a term “imaging” isinterpreted in a broad sense and includes not only capture of an imagein usual picture taking with a camera, but also detection offingerprints and the like.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A solid-state imaging device comprising: a pixelportion configured to have a plurality of photoelectric conversionelements; a peripheral circuit portion configured to be located outsideof a periphery of the pixel portion; and wherein the peripheral circuitportion includes one or more first transistors and a first gateinsulating film, the pixel portion includes a transfer transistor andone or more second transistors and a second gate insulating film, and afilm disposed over the photoelectric conversion elements, the filmincluding at least two layers abutting each other, and composed of asame material; wherein at least one of the at least two layers isdisposed directly above the pixel portion and abuts the second gateinsulating film.
 2. The solid-state imaging device according to claim 1,wherein: a sidewall is disposed on a side of the gate electrode of eachof the first transistors in the peripheral circuit portion; a sidewallis disposed on the side of a gate electrode of each of the secondtransistors in the pixel portion; and for each of the first and secondtransistors, a silicon oxynitride film serving as the gate insulatingfilm extends just below both sidewalls.
 3. The solid-state imagingdevice according to claim 1, wherein the material is an oxide layer. 4.The solid-state imaging device according to claim 1, further comprising:another film formed from a laminate film in the pixel portion andextending beyond the photoelectric conversion elements.
 5. Thesolid-state imaging device according to claim 1, wherein the first gateinsulating film is the same material as the second gate insulating film.6. The solid-state imaging device according to claim 1, wherein thematerial is a silicon oxynitride.
 7. An imaging apparatus comprising: anoptical section; an imaging section configured to have a pixel portionand a peripheral circuit portion; a signal processing section configuredto process a signal output from a plurality of photoelectric conversionelements in the pixel portion; and wherein the peripheral circuitportion includes one or more first transistors and a first gateinsulating film, the pixel portion includes a transfer transistor andone or more second transistors and a second gate insulating film, and afilm disposed over the photoelectric conversion elements, the filmincluding at least two layers abutting each other, and composed of asame material; wherein at least one of the at least two layers isdisposed directly above the pixel portion and abuts the second gateinsulating film.
 8. The imaging apparatus according to claim 7, whereina sidewall is disposed on a side of the gate electrode of each of thefirst transistors in the peripheral circuit portion; a sidewall isdisposed on the side of a gate electrode of each of the secondtransistors in the pixel portion; and for each of the first and secondtransistors, a silicon oxynitride film serving as the gate insulatingfilm extends just below both sidewalls.
 9. The imaging apparatusaccording to claim 7, wherein the material is an oxide layer.
 10. Theimaging apparatus according to claim 7, further comprising: another filmformed from a laminate film in the pixel portion and extending beyondphotoelectric conversion portions of the pixel portion.
 11. The imagingapparatus according to claim 7, wherein the first gate insulating filmis the same material as the second gate insulating film.
 12. The imagingapparatus according to claim 7, wherein the material is a siliconoxynitride.